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  p b l e a d - f r e e ds30222 rev. 9 - 2 1 of 3 bc847bs www.diodes.co m ? diodes incorporated bc847b s dual npn surface mo unt small si gnal transi stor features maximum ratings @ t a = 25c unless otherwise s pecified characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5.0 v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma power dissipation (note 1) p d 200 mw thermal resistance, j unction to ambient (note 1) r q ja 500 c/w operating and storage temperature range t j , t stg -65 to +150 c ideally suited for automatic insertion for switching and af amplifier appli cations ultra-small surface mount package lead free/rohs com pliant (note 2) qualified t o aec-q101 standards f or high reliability case: sot-363 case material: molded pl astic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j- std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram marking: k1f (see page 2) ordering & date code information: see page 2 weight: 0.006 grams mechanical data a m j l d b c h k g f c 2 b 1 e 1 e 2 b 2 c 1 notes: 1. device mounted on fr-4 pc b, 1 inch x 0.85 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 a 8 all dimensions in m m
ds30222 rev. 9 - 2 2 of 3 bc847bs www.diodes.co m electri cal character isti cs @ t a = 25c unless otherwise s pecified characteristic symbol min typ max unit test condition dc current gain (note 3) h fe 200 ? 450 ? v ce = 5.0v, i c = 2.0ma collector-emitter saturation voltage (note 3) v ce (sat) ? ? ? 100 400 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter saturation voltage (note 3) v be (sat) ? 755 ? mv i c = 10ma, i b = 0.5ma base-emitter voltage (note 3) v be 580 665 700 mv v ce = 5.0v, i c = 2.0ma collector cutoff current (note 3) i cbo i cbo ? ? ? 15 5.0 na a v cb = 30v, i e = 0 v cb = 30v, t j = 125c emitter cutoff current (note 3) i ebo ? ? 100 na v eb = 5.0v, i c = 0 gain bandwidth product f t 100 ? ? mhz v ce = 5.0v, i c = 10ma, f = 100mhz collector-base capacitance c cbo ? ? 1.5 pf v cb = 10v, f = 1.0mhz emitter-base capacitance c ebo ? 11 ? pf v eb = 0.5v, f = 1.0mhz month jan feb march apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d date code key k1f = product type mark ing code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k1f k 1 f ym y m marking i nformat ion notes: 3. short durat ion pulse test used to minimize self-heating effect. 4. for packaging details, go to our website at http: //www.diodes.com/datasheets/ap02007.pdf . device packaging shipping bc847bs-7-f sot-363 3000/tape & reel orderi ng inform ation (note 4) year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code j k l m n p r s t u v w x y z
ds30222 rev. 9 - 2 3 of 3 bc847bs www.diodes.co m 1 1 0 1 0 0 1 0 0 0 1 .0 1 0 1 0 0 0 .1 0 .0 1 h d c c u r r e n t g a i n f e , i , c o l l e c t o r c u r r e n t ( m a ) c f ig . 2 , d c c u rr e n t g a in v s c o ll e c to r c u rr e n t v = 5 v ce 10 0 c t = 2 5 c a -5 0 c 0 0 .1 0 .2 0 .3 0 .4 0 .5 0 .1 1 .0 1 0 1 0 0 v , c o l l e c t o r s a t u r a t i o n v o l t a g e ( v ) c e i , c o l l e c t o r c u r r e n t ( m a ) c f ig . 3 , c o ll e c to r s a tu ra ti o n v o lt a g e v s c o ll e c to r c u rr e n t i / i = 2 0 c b t = 1 00 c a 25 c -5 0 c 1 0 1 0 0 1 0 0 0 0 .1 1 .0 1 0 1 0 0 f , g a i n b a n d w i d t h p r o d u c t ( m h z ) t i , c o l l e c to r c u r r e n t ( m a ) c f ig . 4 , g a in b a n d w id th p ro d u c t v s c o lle c to r c u rr e n t t = 2 5 c a v = 1 0v ce 5v 2v 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 0 1 0 0 2 0 0 p , p o w e r d i s s i p a t i o n ( m w ) d t , a m b ie n t t e m p e r a t u r e ( c ) a f ig . 1 , p o w e r d e ra ti n g c u rv e (s ee n ot e 1) notes: 1. device mounted on fr4 printed circuit board . i m p o r t a n t n o t i c e d i o d e s i n c o r p o r a t e d a n d i t s s u b s i d i a r i e s r e s e r v e t h e r i g h t t o m a k e m o d i f i c a t i o n s , e n h a n c e m e n t s , i m p r o v e m e n t s , c o r r e c t i o n s o r o t h e r c h a n g e s w i t h o u t f u r t h e r n o t i c e t o a n y p r o d u c t h e r e i n . d i o d e s i n c o r p o r a t e d d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g o u t o f t h e a p p l i c a t i o n o r u s e o f a n y p r o d u c t d e s c r i b e d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y l i c e n s e u n d e r i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f p r o d u c t s i n s u c h a p p l i c a t i o n s s h a l l a s s u m e a l l r i s k s o f s u c h u s e a n d w i l l a g r e e t o h o l d d i o d e s i n c o r p o r a t e d a n d a l l t h e c o m p a n i e s w h o s e p r o d u c t s a r e r e p r e s e n t e d o n o u r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s . l i f e s u p p o r t d i o d e s i n c o r p o r a t e d p r o d u c t s a r e n o t a u t h o r i z e d f o r u s e a s c r i t i c a l c o m p o n e n t s i n l i f e s u p p o r t d e v i c e s o r s y s t e m s w i t h o u t t h e e x p r e s s e d w r i t t e n a p p r o v a l o f t h e p r e s i d e n t o f d i o d e s i n c o r p o r a t e d .


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